power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 76 MG12100S-BN2MM 1200v 100a igbt module MG12100S-BN2MM features applications ? high short circuit capability , self limiting short circuit current ? igbt 3 chip(trench+field stop technology) ? v ce(sat) with positive temperature coeffcient ? fast switc hing and short tail current ? free wheeling diodes with f ast and soft reverse recovery ? lo w switching losses absolute maximum ratings (t c = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage t j =25c 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 140 a t c =80c 100 a i cm repetitive peak collector current t p =1ms 200 a p tot power dissipation per igbt 450 w diode v rrm repetitive reverse voltage t j =25c 1200 v i f(av) average forward current t c =25c 140 a t c =80c 100 a i frm repetitive peak forward current t p =1ms 200 a i 2 t t j =125c, t=10ms, v r =0v 1850 a 2 s module characteristics (t c = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit t j max max. junction temperature 150 c t j op operating temperature -40 125 c t stg storage temperature -40 125 c v isol insulation test voltage ac, t=1min 3000 v cti comparative tracking index 350 torque module-to-sink recommended (m6) 3 5 nm torque module electrodes recommended (m5) 2.5 5 nm weight 160 g ? high frequency switching application ? medical applications ? motion/ser vo control ? ups systems life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ? rohs agency approvals 1 agency agency file number e71639
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 77 MG12100S-BN2MM 1200v 100a igbt module symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =4ma 5.0 5.8 6.5 v v ce(sat) collector - emitter saturation voltage i c =100a, v ge =15v, t j =25c 1. 7 v i c =100a, v ge =15v, t j =125c 1. 9 v i ces collector leakage current v ce =1200v, v ge =0v, t j =25c 1 ma v ce =1200v, v ge =0v, t j =125c 5 ma i ges gate leakage current v ce =0v,v ge =15v, t j =125c -400 400 na r gint integrated gate resistor 7. 5 q ge gate charge v cc =600v, i c =100a , v ge =15v 0.9 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 7. 1 nf c res reverse transfer capacitance 0.3 nf t d(on) turn - on delay time v cc =600v i c =100a r g =3.9 v ge =15v inductive load t j =25c 260 ns t j =125c 290 ns t r rise time t j =25c 30 ns t j =125c 50 ns t d(off) turn - off delay time t j =25c 420 ns t j =125c 520 ns t f fall time t j =25c 70 ns t j =125c 90 ns e on turn - on energy t j =25c 7. 8 mj t j =125c 10 mj e off turn - off energy t j =25c 8 mj t j =125c 10 mj i sc short circuit current t psc 10s , v ge =15v t j =125c,v cc =900v 400 a r thjc junction-to-case thermal resistance (per igbt) 0.28 k/w diode v f forward voltage i f =100a , v ge =0v, t j =25c 1.65 v i f =100a , v ge =0v, t j =125c 1.65 v i rrm max. reverse recovery current i f =100a , v r =600v di f /dt=-2500a/s t j =125c 140 a q rr reverse recovery charge 20.0 c e rec reverse recovery energy 9 mj r thjcd junction-to-case thermal resistance (per diode) 0.5 k/w electrical and thermal specifcations (t c = 25c, unless otherwise specifed) 2
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 78 MG12100S-BN2MM 1200v 100a igbt module figure 1: typical output characteristics i c (a) v ce ?v? t j =125c t j =25c 200 160 80 40 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v ge =15v 3.5 120 figure 2: typical output characteristics v ge ?v? 0 40 i c (a) 80 200 t j =125c t j =25c v ce =20v 12 10 9 7 6 5 8 11 120 160 figure 3: typical transfer characteristics 15 30 10 5 0 04 8 16 24 e on e off ( mj ) e on e of f r g ? ? v ce =600 v i c =100 a v ge =15v t j =125c 25 12 20 32 36 28 20 figure 4: switching energy vs. gate resistor 0 50 i c ?a? v ce =600v r g =3.9 v ge =15v t j =125c 200 100 e off e on 0 10 15 30 e on e off ( mj ) 20 150 25 5 figure 5: switching energy vs. collector current figure 6: reverse biased saf e operating area 0 50 100 200 250 0 200 400 6008 00 1000 1200 v ce ?v? 140 0 r g =3.9 v ge =15v t j =125c i c (a) 150 v ce ?v? 4.0 3.5 3.0 2.5 1.51.00.50 i c (a) t j =125c 2.04 .5 5.0 200 160 80 40 0 120 ge v =11v ge v = 9v ge v =13v ge v =15v ge v =17v ge v =19v 3
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 79 MG12100S-BN2MM 1200v 100a igbt module figure 7: diode forw ard characteristics v f ?v? 0.6 8.1 2.1 0 0 40 120 200 80 t j =25c t j =125c 2.4 160 e rec ( mj ) r g ? ? 0 6.0 4.0 2.0 0 12. 0 i f =100 a v ce =600 v t j =125c 8.0 10. 0 4 8 16 24 12 20 32 36 28 figure 8: switching energy vs. gate resistor e rec ( mj ) 4.0 2.0 0 50 i f (a) 100 0 12.0 14.0 r g =3.9 v ce =600v t j =125c 200 150 6.0 8.0 10.0 figure 9: switching energy vs. forward current rectangular pulse duration (seconds) z thjc ( k/w ) 0.001 0.01 0.1 1 10 0.01 0.1 1 diode igbt figure 10: transient thermal impedance 4
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 80 MG12100S-BN2MM 1200v 100a igbt module packing options part number marking weight packing mode m.o.q MG12100S-BN2MM MG12100S-BN2MM 160g bulk pack 100 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type MG12100S-BN2MM voltage rating current rating assembly site 12: 1200v 100: 100a s: package s b: 2x(igbt+fwd) dimensions-package s circuit diagram 5 MG12100S-BN2MM lot number space reserved for qr code
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